Rigorous modeling of high-speed semiconductor devices
نویسندگان
چکیده
We present a review of industrial heterostructure devices based on SiGe/Si and III–V compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed. Results from two-dimensional hydrodynamic analyses of heterojunction bipolar transistors (HBTs) are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation. 2004 Elsevier Ltd. All rights reserved.
منابع مشابه
Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...
متن کاملHigh-Speed Ternary Half adder based on GNRFET
Superior electronic properties of graphene make it a substitute candidate for beyond-CMOSnanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, andquantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior,are used to design the digital circuits. This paper presents a new design of ternary half a...
متن کاملA Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model
Modern radio frequency and mixed signal circuit design has increasingly relied on compound semiconductor devices to push operating frequencies deep into millimeter-wave range. InP/InGaAs/InP heterojunction bipolar transistors are capable of achieving both a unity current gain frequency (fT) and maximum frequency of oscillation (fMAX) in excess of 300GHz as well as high linearity and good therma...
متن کاملDevice Parameter Optimization of Silicon Germanium HBT for THz Applications
Now-a-days SiGe HBTs are surpassing even the fastest III-V production devices in the high–speed orbit. The state-of-art in simulation of silicon germanium semiconductor devices is presented in this paper. A comprehensive course of action to model the device parameter characterization of High Frequency 0.1μm SiGe HBT is depicted which is based on the technique of direct parameter extraction. Wit...
متن کاملNANOSCALE DEVICE MODELING FROM MOSFETS TO MOLECULES A Thesis
Damle Prashant Subhash Ph D Purdue University May Nanoscale device modeling from MOSFETs to molecules Major Professor Supriyo Datta This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices As conventional metal oxide semiconductor devices shrink below the one hundred nanometer regime quantum mechanical e ects are be ginning to play an inc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Reliability
دوره 44 شماره
صفحات -
تاریخ انتشار 2004